Processes
Rivlan,
Inc. has designed into many CMOS, Si-Ge BiCMOS,
BiCMOS and bipolar processes from mainstream
vendors. Our process list includes
CMOS: 14 nm from Global Foundries
16 nm from TSMC
0.35 - 0.13
µm and 90 - 28 nm from TSMC
0.18 µm, 0.13 µm and 90 – 28 nm from Global Foundries
90 nm and 28 nm from UMC
0.35 µm and 0.25 µm from
Sharp
Si-Ge BiCMOS: 90 nm, fT = 310 GHz from Global Foundries
0.13 µm, fT = 210 GHz from Global Foundries
0.18 µm, fT = 120 GHz from MEI
0.35
µm, fT = 60 GHz from Jazz
0.35 µm, fT = 60
GHz from ST Micro
BiCMOS:
0.5 µm, fT = 45 GHz from Maxim
bipolar:
0.8 µm, fT = 27
GHz from Maxim

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